三毫米单片集成电路噪声系数测量技术  

Noise figure measurement techniques of 3 mm monolithic integrated circuits

作　　者：郑易平[1] 郑延秋[2] 

机构地区：[1]石家庄供水集团,石家庄050021 [2]河北半导体研究所,石家庄050002

出　　处：《国外电子测量技术》2009年第9期53-56,共4页Foreign Electronic Measurement Technology

摘　　要：采用双平衡混频器和本振信号源,把3 mm频段的噪声信号下变频至噪声系数分析仪的频率范围内,配探针台作在片噪声系数测量。为了减小本振源相位噪声和系统元件损耗的影响,在混频器前加低噪声放大器,使系统更加稳定,重复性好、准确度高。该系统具有频率范围宽可扩展至75～110 GHz、结构简单、成本低的特点。In this project, we use double balanced mixer and LO to down-convert 3mm noise signal to within the frequency span of noise figure meter, it be used with wafer station to do on-wafer noise figure measurement. In order to reduce the influence of the phase noise of LO and the loss of system components, we add a low noise figure amplifier in front of the mixer to make the system more stabilized, have good repeatability and high accuracy. Experimental data shows that the system has the following advantages：its frequency span can be extend to（75-110 GHz）, simple configuration, low cost.

关 键 词：三毫米 噪声系数 在片测试 

分 类 号：TN7[电子电信—电路与系统]