n型金属氧化物半导体场效应晶体管噪声非高斯性研究  

Non-Gaussianity of noise in n-type metal oxide semiconductor field effect transistor

作　　者：李伟华[1] 庄奕琪[1] 杜磊[2] 包军林[1] 

机构地区：[1]西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安710071 [2]西安电子科技大学技术物理学院,西安710071

出　　处：《物理学报》2009年第10期7183-7188,共6页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:60676053)资助的课题~~

摘　　要：基于n型金属氧化物半导体场效应晶体管(nMOSFET)噪声的数涨落模型,采用高阶统计量双相干系数平方和研究了nMOSFET噪声的非高斯性.通过对nMOSFET实际测试噪声的分析,发现nMOSFET器件噪声存在非高斯性;小尺寸器件噪声的非高斯性强于大尺寸器件;在器件的强反型线性区,其非高斯性随着漏压的增加而增加.文中还通过蒙特卡罗模拟和中心极限定理理论对nMOSFET噪声的非高斯性作了深入的探讨.On the basis of the number fluctuation model of n-type metal oxide semiconductor field effect transistor（nMOSFET）,non-Gaussianity of noise in nMOSFET was studied by the quadratic sum of the bicoherence,which belongs to higher order statistics.Comparing nMOSFET s test noise with Monte Carlo simulative noise,we proved that there is non-Gaussianity in nMOSFT s noise,that the noise s non-Gaussian degree in small size devices is stronger than that in large size devices,and that the non-Gaussian degree of nMOSFF＇s noise in strong inversion and linear regime increase with the drain-source voltage. The physical mechanism of nMOSFET noise is discussed from Monte Carlo simulation and the central limit theorem.

关 键 词：噪声 非高斯性 n型金属氧化物半导体场效应晶体管 氧化层陷阱 

分 类 号：TN386[电子电信—物理电子学]