微晶硅薄膜高速沉积及电学性质的研究  

High rate growth and electronic property of μc-Si∶H

作　　者：申陈海[1] 卢景霄[1] 陈永生[1] 

机构地区：[1]郑州大学物理工程学院,材料物理教育部重点实验室,郑州450052

出　　处：《物理学报》2009年第10期7288-7293,共6页Acta Physica Sinica

基　　金：国家重点基础研究发展计划(批准号:2006CB202601)资助的课题~~

摘　　要：采用甚高频等离子体增强化学气相沉积(VHF-PECVD)技术在高功率密度和高压强条件下,通过改变硅烷浓度和气体总流量对薄膜沉积参数进行了两因素优化,最终在硅烷浓度为4.5%,气体总流量为100sccm条件下,获得沉积速率1.42nm/s,电导激活能0.47eV的优质硅薄膜;同时,通过单因素优化制备出沉积速率为2.1nm/s的微晶硅薄膜.利用晶粒间界势垒模型和费米能级统计偏移模型对薄膜的电学特性和传导行为分别进行了研究分析,同时初步分析了"后氧化"对薄膜电学性能的影响.The deposition parameters of hydrogenated microcrystalline silicon（μc-Si：H）films were optimized for two factors,the siliane concentration and total flow rate,under high deposition power density and high deposition pressure by very high frequency plasma enhanced chemical vapor deposition（VHF-PECVD）.The device-grade film with activation energy of 0.47 eV was finally prepared at a rate of 1.42 nm/s when the siliane concentration was 4.5% and the total flow rate was 100 sccm.Meanwhile,the deposition rate of microcrystalline thin films has reached 2.1 nm/s under 600 Pa. We have researched the electronic property and the conductivity of thin films by use of grain boundary trapping model and statistical shift of Fermi level model respectively. Moreover, we analyzed the effect of post-oxygenation on the electronic performance of thin films.

关 键 词：μc-Si:H 甚高频等离子体增强化学气相沉积 高速沉积 电学特性 

分 类 号：O484.42[理学—固体物理]