水溶液中阴极电沉积半导体 CdTe 薄膜性能的研究  

STUDY ON THE CATHODIC DEPOSITION OF CdTe SEMICONDUCTOR THIN FILM FROM AQUEOUS ELECTROLYTES

作　　者：樊玉薇[1] 李永祥[1] 吴冲若[1] 

机构地区：[1]东南大学电子工程系

出　　处：《太阳能学报》1998年第4期425-428,共4页Acta Energiae Solaris Sinica

基　　金：国家自然科学基金

摘　　要：研究了半导体ＣｄＴｅ薄膜不同阴极电沉积条件（搅拌、加温）下，沉积电位与电流密度、沉积速率的关系。着重研究了沉积电位对ＣｄＴｅ膜层成份及导电类型的影响，通过控制沉积电位制备了不同导电类型的半导体ＣｄＴｅ薄膜。对沉积膜形貌和结构分析表明，室温搅拌条件下沉积的ＣｄＴｅ薄膜，整体均匀性好，呈非晶结构，氮气氛中高温退火后，ＣｄＴｅ膜沿一定方向有较明显取向。The cathodic deposition of CdTe semiconductor thin films from aqueous electrolytes is studied in this paper.The relationship between the deposition potentials and the current intensities under different deposition conditions(stirring,temperature,etc.)are analysed.Emphysis is put on the influence of deposition potentials on the Cd/Te ratios of CdTe thin films and the n or ptype of CdTe semiconductors.By adjusting deposition potential,n type and p type CdTe thin films are prepared respectively.The surface appearance and the structure of the CdTe thin films are researched.Its shown that CdTe thin film deposited under room temperature with stirring have fine and uniform grain sizes and amorphous structure.After CdTe thin film is annealed in Nitrogen atmosphere,the degree of crystallinity of the CdTe thin film will increase.

关 键 词：半导体 薄膜 沉积电位 太阳能 

分 类 号：O484[理学—固体物理] TN304.055[理学—物理]