氧分压对电子束蒸发TiO_2薄膜残余应力的影响  

Influence of oxygen partial pressure on residual stresses of TiO_2 films prepared by electron beam evaporation

作　　者：郝殿中[1] 王庆[1] 宋连科[1] 

机构地区：[1]山东省激光偏光与信息技术重点实验室,曲阜师范大学激光研究所,山东曲阜273165

出　　处：《光电子．激光》2009年第5期642-644,共3页Journal of Optoelectronics·Laser

基　　金：山东省教育厅资助项目(J05C04)

摘　　要：采用电子束蒸发法制备了单层TiO2薄膜,控制O2流量从10mL/min以步长10mL/min递增至50mL/min(标况下)。利用ZYGO干涉仪测量基片镀膜前后的面型变化;采用Stoney公式计算出残余应力,分析了不同O2压下残余应力的变化。在本实验条件下,TiO2薄膜的应力随O2的增大,张应力先增大后减小;随O2压继续增大,由张应力逐渐过渡到压应力;O2压过大时,压应力减小。因此,可以通过改变O2压来控制薄膜的应力。应力的变化与薄膜的微观结构密切相关,分析了所有样品的X射线衍射(XRD)谱发现,薄膜结构均为非晶态。TiO2 films were prepared by electron beam evaporation on K9 glass. Oxygen flux was varied in the range of 10 mL/min to ,50 mL/min by the step of 10 mL/min （under standard condition）. The residual stress was measured by observing the substrate deflection with ZYGO interferometer. The results show that,as the oxygen pressure increases,the residual stresses of T iO2 films on both substrates are tensile and increase firstly,then decrease, gradually from tensile to compressive; as the oxygen pressure increases uheriorly, the residual stresses decrease gradually. The changes may be due to the variation of the microstructure of the TiO2 films, which is inspected with X-ray diffraction （XRD）. It is found that the microstructures of the films are amorphous.

关 键 词：TIO2薄膜 残余应力 O2分压 电子束蒸发 

分 类 号：O484.1[理学—固体物理]