Shallow Donor Impurity Ground State in a GaAs/AlAs Spherical Quantum Dot within an Electric Field  

作　　者：YUAN Jian-Hui XIE Wen-Fang HE Li-Li 

机构地区：[1]Department of Physics, College of Physics and Electronic Engineering, Guangzhou University, Guangzhou 510006, China

出　　处：《Communications in Theoretical Physics》2009年第10期710-714,共5页理论物理通讯（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No.10775035

摘　　要：Using the configuration-integration methods （CI） [Phys. Rev. B 45 （1992） 19], we report the results of the Hydrogenie-impurity ground state in a GaAs/AIAs spherical quantum dot under an electric field. We discuss the variations of the binding energies of the Hydrogenic-impurity ground state as a function of the position of impurity D, the radius R of the quantum dot, and also as a function of electric field F. We find that the ground energy and binding energy of impurity placed anywhere depend strongly on the position of impurity. Also, electric field can largely change the Hydrogenic-impurity ground state only limiting to the big radius of quantum dot. And the differences in energy level and binding energy are observed from the center donor and off-center donor.

关 键 词：DONOR quantum dots binding energy electric field 

分 类 号：O471.1[理学—半导体物理] TN304.23[理学—物理]