掺钨氧化钒薄膜的制备及研究  

Preparation and Ivestigation of W-doped Vanadium Oxide Thin Film

作　　者：龙航宇[1,2] 余志明[1,2] 陈爽[1,2] 魏秋平[1,2] 刘学璋[1,2] 

机构地区：[1]中南大学材料科学与工程学院,长沙410083 [2]有色金属材料科学与工程教育部重点实验室,长沙410083

出　　处：《中国表面工程》2009年第5期31-35,共5页China Surface Engineering

摘　　要：采用复合靶磁控溅射法在SiO2玻璃、普通玻璃和Si(100)上沉积氧化钒薄膜,然后对其进行真空退火。分别利用X射线衍射、原子力显微镜、紫外可见光分光光度计和红外光谱仪分析样品的物相、表面形貌和光透过率。结果表明:500℃下退火1 h,SiO2玻璃衬底上沉积40 min的薄膜主要物相为VO2和V2O5,退火时间延长到2 h,薄膜主要物相为VO2,薄膜晶粒尺寸均匀,晶粒大小约为100 nm;Si(100)上沉积40 min的薄膜在500℃下退火2 h后,物相为低于+4价的钒氧化物;掺钨后薄膜可见光和红外光的透过率都有提高。The thin films of tungsten doped vanadium oxides were deposited on SiO2 glass, float glass and Si（100） by direct current reactive magnetron sputtering and then annealed in vacuum. The phase composition, surface morphology and transmittance were detected by X-ray diffractometer, atomic force microscopy and infrared spectrometer as well as ultraviolet visible spectrophotometer, respectively. The results show that, with the sputtering time of 40rain the films on SiO2 glass mainly change into VO2 and V205 under 500℃ for 1 hour. When the vacuum annealing time increased to 2 h, the films mainly change into VO2 and the size of grains are about 100nm. Under 500℃ for 2 h, the films with the sputtering time of 40min on Si（100） were vanadium oxides with low-valences. The infrared transmittance of the W-doped VO2 films increase as the visible light transmittance did.

关 键 词：磁控溅射 掺钨 VO2 

分 类 号：TG146.4[一般工业技术—材料科学与工程]