Ka波段低相位噪声GaAs MHEMT单片压控振荡器  

A Ka-band GaAs MHEMT VCO MMIC with Low Phase Noise

作　　者：王维波[1,2,3] 王志功[1] 张斌[2,3] 康耀辉 吴礼群[3] 杨乃彬[2,3] 

机构地区：[1]东南大学射频与光电集成电路研究所,南京210096 [2]单片集成电路与模块国家重点实验室,南京210016 [3]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2009年第3期352-355,共4页Research & Progress of SSE

摘　　要：报道了一种低相位噪声VCOMMIC芯片,采用传统的源端反馈形成负阻来消除谐振回路中的寄生电阻,通过合理的输出匹配实现起振条件并抑制谐波,利用南京电子器件研究所0.15μmGaAsMHEMT工艺,研制的Ka波段GaAsMHEMT压控振荡器,典型振荡频率为39.34GHz,频率变化范围38.6～41.3GHz之间,调谐带宽2.7GHz,典型输出功率6.97dBm,频偏100kHz,相位噪声为-81.1dBc/Hz。A Ka-band VCO MMIC with low phase noise is reported in this paper.To eliminate the parasitic resistance of the oscillator loop,this chip utilizes the source feedback forming the negative resistance.Through the reasonable output matching network,the chip also realizes the frequency start-up condition and restrains the output harmonic.Finally,fabricated by the NEDI s 0.15 μm GaAs MHEMT technology,the MMIC oscillates at the 39.34 GHz typically and ranges from 38.6 GHz to 41.3 GHz,the voltage controlled bandwidth achieves 2.7 GHz, and the typical output power reaches 6.97 dBm, the phase noise also achieves -81.1 dBe/Hz@100 kHz.

关 键 词：砷化镓 变性高电子迁移率晶体管 单片压控振荡器 相位噪声 

分 类 号：TN432[电子电信—微电子学与固体电子学] TN752.5