硫代铝酸钡(BaAl_2S_4:Eu)靶材制备工艺研究  

Research on the fabricating techniques of the BaAl_2S_4:Eu sputtering targets

作　　者：丁曌[1] 张东璞[1] 喻志农[1] 薛唯[1] 

机构地区：[1]北京理工大学光电学院薄膜与显示技术实验室,北京100081

出　　处：《光学技术》2009年第5期785-787,共3页Optical Technique

基　　金：北京市自然科学基金(3063022);部委预研项目(51302060206)

摘　　要：为制备薄膜无机电致发光显示器件中的硫代铝酸钡(BaAl2S4:Eu)蓝色发光层薄膜,采用粉末烧结的方法,经过对BaS,Al2S3,等原材料的粉碎、研磨、高温烧结,以及热压等过程,制备出用于溅射镀制BaAl2S4:Eu蓝色发光层薄膜的靶材样品。对制备的BaAl2S4:Eu发光层薄膜进行的光致发光分析表明,在300nm紫外光激发下,薄膜能够发射出峰值位于470nm处的蓝光。对发光层薄膜的XPS分析结果表明,发光层薄膜中含氧量较高,随着溅射功率的提高,薄膜中铝元素有显著增加;而随着淀积压强的增大,硫元素则显著减少。A new method on the fabricating techniques of the BaAl_2S_4：Eu sputtering target is introduced,which is called powder sintering method.The particular fabricating conditions based on the BaAl_2S_4：Eu sample are illustrated as comminution,rubbing,sintering and hot-pressing.The photoluminescence spectrum of the BaAl_2S_4：Eu films shows that there are 470nm PL emission peaks of the as-fabricated phosphor films excited by 300nm ultraviolet radiations.The BaAl_2S_4：Eu films contain more oxygen than other elements such as Ba,Al,S,Eu,and the content of Al aggrandizes when the sputtering power increases and the content of S decreases when the pressure increases in the vacuum chamber.

关 键 词：光学材料 溅射靶材 粉末烧结法 硫代铝酸钡掺杂铕(BaAl2S4:Eu) 

分 类 号：TN104.3[电子电信—物理电子学]