γ-Al_2O_3/Si(100)薄膜高真空MOCVD异质外延生长  

Heteroepitaxial Growth of γ Al 2O 3/Si With HVMOCVD

作　　者：昝育德[1] 王俊[1] 韩秀峰[1] 王玉田[1] 王维民 王占国[1] 林兰英[1] 

机构地区：[1]中国科学院半导体研究所

出　　处：《Journal of Semiconductors》1998年第12期886-889,共4页半导体学报（英文版）

基　　金：国家计委"八五"重大基金;国家计委"九五"重大基金

摘　　要：本文作者在自己组装的立式ＭＯＣＶＤ设备上，成功地应用高真空生长技术，于１０５０℃的高温条件下，在硅上外延生长了γ－Ａｌ２Ｏ３薄膜．从ＲＨＥＥＤ看到（１００）硅上生长的薄膜是（１００）立方单晶γ－Ａｌ２Ｏ３的衍射图样；平移样品，图样并不发生变化．Ｘ射线双晶衍射看到，除了硅的（４００）峰和（２００）峰以外，只在２θ为４５°处有一个低而宽的小峰．ＸＰＳ谱给出氧的１ｓ峰位为５３２．３ｅＶ，Ａｌ的２ｐ峰位为７５．４ｅＶ，将他们与α－Ａｌ２Ｏ３比较，对应峰位移动了约３．５ｅＶ．俄歇谱说明其铝氧组分比近于γ－Ａｌ２Ｏ３．说明在我们实验室里确实长出单晶γ－Ａｌ２Ｏ３薄膜，与衬底的结晶关系是（１００）γ－Ａｌ２Ｏ３／／（１００）Ｓｉ，［０１０］γ－Ａｌ２Ｏ３／／［０１０］Ｓｉ．Abstract The single crystal γ Al 2O 3 epilayers have been successfully grown on Si(100) substrates at 1050℃ in a virtical high vacuum chemical vapour deposition (HVCVD) equipment set up by ourself. The high crystalline quality of the single crystal epilayers, γ Al 2O 3(100)//Si(100), is confirmed by both reflection high energy electron diffraction and double crystal X ray diffraction(XRD). Beside the Si (400) and Si (200) peaks, only one small and fat peak γ Al 2O 3 (400) at about 2 θ =45° is observed in the XRD patterns. The 1s peak at 532 3eV for the oxygen and the 2p peak at 75 4 eV for the alumium are observed with XPS. The position of the peaks in XPS moves 3 5eV to the lower energy compared with that of α Al 2O 3 compound. The Auger spectra show that the atom ratio between the aluminium and oxygen in the epilayers is near that of γ Al 2O 3.

关 键 词：MOCVD 外延生长 SOS 硅 

分 类 号：TN304.12[电子电信—物理电子学] TN304.054