High frequency modeling for quantum-well laser diodes  

作　　者：GAO JianJun 

机构地区：[1]School of Information Science and Technology, East China Normal University, Shanghai 200062, China

出　　处：《Chinese Science Bulletin》2009年第20期3633-3638,共6页

基　　金：Supported by the National Natural Science Foundation of China (Grant No.6053-6010);Program for New Century Excellent Talents

摘　　要：High frequency modeling of quantum-well(QW) laser diodes for optoelectronic integrated circuit(OEIC) design is discussed in this paper.Modeling of the intrinsic device and the extrinsic components is discussed by accounting for important physical effects at both dc and high frequency.The concepts of equivalent circuits representing both intrinsic and extrinsic components in a QW laser diode are analyzed to obtain a physics-based high frequency model.The model is based on the physical rate equations,and is versatile in that it permits both small-and large-signal simulations to be performed.Several procedures of the high frequency model parameter extraction are also discussed.Emphasis here is placed on validating the model via a comparison of simulated results with measured data of the small-signal modulation response,obtained over a wide range of optical output powers.High frequency modeling of quantum-well （QW） laser diodes for optoelectronic integrated circuit （OEIC） design is discussed in this paper, Modeling of the intrinsic device and the extrinsic components is discussed by accounting for important physical effects at both dc and high frequency. The concepts of equivalent circuits representing both intrinsic and extrinsic components in a QW laser diode are analyzed to obtain a physics-based high frequency model, The model is based on the physical rate equations, and is versatile in that it permits both small- and large-signal simulations to be performed, Several procedures of the high frequency model parameter extraction are also discussed. Emphasis here is placed on validating the model via a comparison of simulated results with measured data of the small-signal modulation response, obtained over a wide range of optical output powers.

关 键 词：量子阱激光器 高频模型 高频率 光电集成电路 信号模拟 模型参数提取 物理效应 电路元件 

分 类 号：TN248.4[电子电信—物理电子学] TN432