载流子色散型硅基CMOS光子器件  

Silicon-based CMOS Photonic Devices Using Carrier Dispersion Effect

作　　者：赵勇[1] 江晓清[1] 杨建义[1] 王明华[1] 

机构地区：[1]浙江大学信息与电子工程学系,杭州310027

出　　处：《光子学报》2009年第10期2485-2490,共6页Acta Photonica Sinica

基　　金：国家重大基础研究发展计划项目(2007CB613405)资助;华为科技基金项目的资助

摘　　要：为了实现硅基单片光电子集成器件的实用化,介绍了采用P-I-N、双极型场效应晶体管、金属氧化物半导体和PN结结构的载流子色散型硅基CMOS光子器件的发展状况和特点,并汇报了硅基CMOS光子器件的设计和制作方面的工作.利用商业的CMOS工艺线制作的器件获得了较好的结果,光调制器消光比约18dB,1×2光开关消光比约21dB,谐振环的消光比8～12dB.采用CMOS技术研制硅基光子器件,将能使集成光子学的发展上一个新的台阶.In order to realize the practical application of the Silicon-based optoelectronic devices,the progress and characteristics of Silicon-based CMOS photonic devices using carrier dispersion effect with structures of P-I-N,Bipolar Mode Field Effect Transistor（BMFET）,Metal Oxide Semiconductor（MOS）and PN junction are reviewed.And our work in design and fabrication of Silicon-based CMOS photonic devices is reported.The devices fabricated by commercial CMOS process have expected results.The extinction ratios of an optical modulator,a 1 × 2 optical switch and a ring resonator are about 18 dB, 21 dB and 8 ～ 12 dB, respectively. The introduction of CMOS technology to the design and fabrication of Silicon-based photonic devices will make integrated optics be on a new level.

关 键 词：集成光学 硅基 载流子色散效应 CMOS光子器件 

分 类 号：TN256[电子电信—物理电子学]