一种多模多频无线收发器前端SiGe BiCMOS低噪声放大器  

SiGe BiCMOS LNA for Multi-mode and Multi-frequency Wireless Transceiver Front-end

作　　者：周进[1] 田亮[1] 陈磊[1] 阮颖[1] 赖宗声[1,2] 

机构地区：[1]华东师范大学微电子电路与系统研究所,上海200062 [2]华东师范大学纳光电集成与先进装备教育部工程研究中心,上海200062

出　　处：《微电子学》2009年第5期631-634,683,共5页Microelectronics

基　　金：上海市科委项目(08706200802;08700741300);纳光电教育工程中心(NPAI)项目;上海重点学科建设项目(B411)资助

摘　　要：基于IBM0.18μm SiGe BiCMOS工艺,提出了一种应用于2.4～2.5GHz802.11b/g频段的低噪声放大器(LNA)。电路采用全差分发射极电感负反馈共射共基(Cascode)结构,对称电感有效地降低了芯片面积,优化了电路性能。仿真结果表明:该电路在2.4GHz到2.5GHz频率范围内,增益(S21)达到25dB,噪声系数(NF)小于1.5dB,大幅度提高了收发机系统的性能。此外,输入和输出匹配(S11,S22)分别达到-15dB,1dB压缩点大于-25dBm。电源电压为2.5V时电路总电流为3mA。A 2. 4-2. 5 GHz low noise amplifier in accordance with IEEE 802. 11 b/g protocol was proposed based on IBM 0. 18μm SiGe BiCMOS process. In this circuit, differential cascode structure with inductive emitter degeneration was used. The chip area was reduced and circuit performance was optimized by employing symmetrical inductors. Simulation results indicated that the circuit had a gain （S21） of 25 dE and a noise figure less than 1.5 dB in the frequency range from 2. 4 GHz to 2. 5 GHz, which significantly improved performance of the transceiver system. Furthermore, an input/output impedance matching （S11, S22 ） under -15 dB and a 1-dE compression point better than -25 dBm were achieved for the circuit, which drew a current of 3 mA from 2. 5 V power supply.

关 键 词：低噪声放大器 共射共基 SIGE BICMOS 

分 类 号：TN433[电子电信—微电子学与固体电子学]