14～14.5GHz 20W GaAs PHEMT内匹配微波功率管  

14-14.5 GHz 20 W GaAs PHEMT Internally Matched Microwave Power FET

作　　者：赵博[1] 唐世军[1] 王帅[1] 

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《微电子学》2009年第5期725-728,共4页Microelectronics

摘　　要：介绍了一种Ku波段内匹配微波功率场效应晶体管。采用GaAs PHEMT 0.25μmT型栅工艺,研制出总栅宽为14.4mm的功率PHEMT管芯。器件由四管芯合成,在14～14.5GHz频率范围内,输出功率大于20W,附加效率大于27%,功率增益大于6dB,增益平坦度为±0.3dB。An internally matched microwave power FET was presented. Using 0. 25 μm T-gate GaAs PHEMT process, power PHEMT chip with a total gate width of 14. 4 mm was fabricated, which was comprised of four dies. From 14 GHz to 14. 5 GHz, the device had an output power over 20 W, an added efficiency above 27%, and a power gain over 6 dB, and its gain flatness across the band was within ±0. 3 dB.

关 键 词：砷化镓 赝配高电子迁移率晶体管 微波功率场效率晶体管 

分 类 号：TN386[电子电信—物理电子学]