钛酸锶钡薄膜性能优化研究  

Properties Optimization of Ba_(1-x)Sr_xTiO_3 Thin Films

作　　者：王军[1,2] 华全[2] 韦世章[2] 黄胜媛[2] 周伟超[2] 

机构地区：[1]江西科技师范学院江西省材料表面工程重点实验室,南昌330013 [2]江西科技师范学院材料科学与工程学院,南昌330013

出　　处：《绝缘材料》2009年第5期48-51,共4页Insulating Materials

基　　金：江西省教育厅青年科学基金项目(GJJ09568)

摘　　要：综述了钛酸锶钡[Ba1_xSrxTiO3(简称BST)]薄膜的制备方法及研究进展,介绍了衬底和电极材料对BST薄膜性能的影响,讨论了引入缓冲层、掺杂和制备组分梯度薄膜对其性能的影响,并指出了未来BST薄膜材料的研究发展方向。Ba1-xSrxTiO3 （BST） thin films have excellent dielectric properties. It has potential application in microelectronic devices, such as microwave tunable devices and DRAM, etc. In this paper, the achievements on the fabricating method were summarized, and the influence of substrates and electrode on the properties of BST thin films was studied. The effect of buffer layer, doping and composition gradient on the properties of the films was discussed and the research in future on BST thin films was suggested.

关 键 词：BST薄膜 掺杂 组分梯度 

分 类 号：TM215.3[一般工业技术—材料科学与工程] TM201.4[电气工程—电工理论与新技术]