磷钨酸涂覆ISFET制作DrugFET的研究  

Study on the Ion Sensitive Field Effect Transistor Modified with Phosphotungstic Acid to Make DrugFET

作　　者：李先文 黄强 

机构地区：[1]渭南师专化学传感器研究室

出　　处：《半导体技术》1998年第5期45-46,50,共3页Semiconductor Technology

基　　金：陕西省科学基金

摘　　要：用磷钨酸涂覆离子敏感场效应晶体管（ＩＳＦＥＴ）制成药物敏感场效应晶体管（ＤｒｕｇＦＥＴ）。该器件具有全固态化、易微型化、集成化和多功能化等特点。用其对药物制剂的含量进行测定，所得结果和药典分析结果一致。The ion sensitive field effect transistor(ISFET) modified with phosphotungstic acid is presented,and a kind of DrugFET is made.It's a solid state,small size and can be miniaturized and integrated.It has been used for the determination of dioxopromethazine in medicinal tablet.The results were in agreement with the pharmacopoeia of China.

关 键 词：磷钨酸 离子敏感 场效应晶体管 药物分析 ISFET 

分 类 号：TN386[电子电信—物理电子学]