横向固相外延生长及其影响因素的研究  

Lateral Growth of Solid phase Epitaxy and Studies on its Effective Factors

作　　者：罗南林[1] 杨春晖[2] 刘百勇[3] 

机构地区：[1]广东农工商管理学院计算机系 [2]电子部第五研究所 [3]华南理工大学应用物理系

出　　处：《半导体技术》1998年第5期51-53,共3页Semiconductor Technology

摘　　要：对非超高真空条件下在有ＳｉＯ２图形的硅单晶衬底上用离子束溅射淀积非晶硅薄膜，经过真空退火形成的横向固相外延生长及其影响因素进行了研究，得出了有利于Ｌ－ＳＰＥ生长的材料参数和工艺处理条件。This paper introduces the deposition of amorphous thin silicon films on the single Si crystal substrates with patterned SiO 2 by ultrahigh vacuum ion beam sputtering and presents the studies on the lateral growth of solid phase epitaxy(L SPE)formed by vacuum annealing and its effective factors.Advantageous material parameters and processing conditions to the L SPE growth were obtained.

关 键 词：固相外延 绝缘层上硅单晶 溅射 二氧化硅 

分 类 号：TN304.21[电子电信—物理电子学] TN304.054