衬底温度对Cr掺杂ZnO薄膜结构和透过率的影响  

Effect of substrate temperature on structure and transmittance of Cr-doping ZnO thin films

作　　者：付长凤[1,2] 陈希明[1] 李伟[1] 韩连福[3] 吴小国[1] 

机构地区：[1]天津理工大学电子信息工程学院,天津300384 [2]大庆石油学院数学科学与技术学院,大庆163318 [3]大庆石油学院电子科学学院,大庆163318

出　　处：《天津理工大学学报》2009年第5期15-18,共4页Journal of Tianjin University of Technology

基　　金：天津市自然科学基金重点项目(06YFJZJC00100)

摘　　要：采用磁控溅射法在载玻片上制备了具有c轴高择优取向的Cr掺杂ZnO薄膜,利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)和紫外-可见分光光度计(UV-Vis)研究了衬底温度对Cr掺杂ZnO薄膜结构及光学透射特性的影响.结果表明,在衬底温度为400℃时制备的Zn0.98Cr0.02O薄膜具有最好的结晶质量;衬底温度对薄膜的吸收边基本没有影响,但衬底温度为400℃时薄膜具有较高的透过率,其原因是在该条件下薄膜具有较好的结晶质量.Cr-doping ZnO thin films with c-axis preferred orientation were prepared on glass substrates by magne-tron sputtering at different substrate temperatures. Effect of the substrate temperatures on the structural and optical characteristic of Cr- doping ZnO thin films was studied by X-ray diffraction（XRD） , scanning electron microscopy （SEM） and UV spectrophotometer. The results showed that Zn0.98Cr0.020 thin film had better crystallization quality when the substrate temperature was 400℃ ; The absorption edges had nothing with the substrate temperature. Furthermore, Zn0.98 Cr0.02 0 film possessed a higher transmittance in the visible region due to the film had better crystallization quality when the substrate temperature was 400 ℃.

关 键 词：Cr掺杂ZnO薄膜 衬底温度 透过率 

分 类 号：O484[理学—固体物理]