多孔硅光致发光热稳定性研究  

The Study of Thermal Stability of Porous Silicon

作　　者：万小军[1] 史华[2] 刘小兵[2] 

机构地区：[1]湖南城市学院计算机科学系,湖南益阳413000 [2]长沙理工大学物理与电子科学学院,长沙410074

出　　处：《湖南城市学院学报（自然科学版）》2009年第3期42-46,共5页Journal of Hunan City University:Natural Science

基　　金：湖南省教育厅科研基金资助项目(08C207)

摘　　要：运用微拉曼谱仪以不同功率的激光入射到用阳极脉冲腐蚀制备的多孔硅样品研究多孔硅的热稳定性.用斯托克斯与反斯托克斯散射强度的比率确定样品的温度.观察比较不同温度下多孔硅样品的拉曼谱趋向,发现在激光功率与样品温度之间的关系曲线上分为3个过程,与拉曼频移和拉曼强度的曲线相一致.所有现象都可以用Si-O健和非晶Si被光氧化的机制解释.The thermal stability of porous silicon（PS） fabricated by pulsed anodic etching method was investigated by micro-Raman spectra with different incident laser powers. The ratio of Stokes and Anti-Stokes scattering intensities were used to determine the sample temperature. The Raman Spectra of PS in different temperature are compared. The trend of spectra is observed. The curve of the relationship between laser power and samole temperature is showed as three processes. It is consistent with the curve of Raman shift and Raman intensity. All the phenomena were explained by the appearance of Si-O bond and amorphous Si because of the photo-ox-ide effects.

关 键 词：多孔硅 热稳定性 微拉曼谱 

分 类 号：O472.7[理学—半导体物理]