硅PIN光电二极管γ电离脉冲辐射的数值模拟  

Simulation on Photocurrent of Si PIN Photodiode Induced by γ Ionization Pulse Radiation

作　　者：王祖军[1,2] 刘以农[1] 陈伟[2] 唐本奇[2] 黄绍艳[2] 刘敏波[2] 肖志刚[2] 张勇[2] 

机构地区：[1]清华大学工程物理系粒子技术与辐射成像教育部重点实验室,北京100084 [2]西北核技术研究所,西安710024

出　　处：《半导体光电》2009年第5期681-683,共3页Semiconductor Optoelectronics

摘　　要：分析了γ电离脉冲辐射诱发硅PIN光电二极管产生光电流的机理。建立了硅PIN光电二极管的器件物理模型以及γ电离脉冲辐射效应模型;运用MEDICI软件,进行了辐射效应数值模拟计算。得出了γ电离脉冲辐射剂量率在100～109Gy(Si)/s范围内,诱发硅PIN光电二极管光电流变化的初步规律。对比了辐射效应数值模拟结果与国外相关文献给出的辐照实验结果。The mechanism of photocurrent of Si PIN photodiode induced by γ ionization pulse radiation is analyzed. The device physics and γ ionization pulse radiation models are established to simulate photocurrent of Si PIN photodiode by MEDICI software. The primary regularity of photocurrent of Si PIN photodiode is concluded by γ ionization pulse radiation with the dose rate of 10^0- 10^9 Gy （Si）/s. The Simulation results are in agreement with the experimental results given in correlative literatures.

关 键 词：PIN光电二极管 电离脉冲辐射 光电流 数值模拟 

分 类 号：TN364.1[电子电信—物理电子学]