室温红外探测用非晶Ti薄膜的制备及表征  

Preparation and Characterization of Amorphous Ti Films for Uncooled Infrared Detectors

作　　者：刘爽[1] 陈煦[1] 杨亚培[1] 熊平[2] 刘俊刚[2] 

机构地区：[1]电子科技大学光电信息学院,成都610054 [2]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2009年第5期708-710,730,共4页Semiconductor Optoelectronics

基　　金：电子科技大学青年基金资助课题

摘　　要：采用快速蒸发并冷却衬底的方法,在不同衬底结构上制备出了电阻温度系数(TCR)优于0.25%的红外探测用非晶Ti薄膜。通过表征分析了氧对薄膜电阻影响,以及组分对其性能的影响。研究表明,Ti薄膜有较强吸附氧能力,低价态的Ti利于红外探测。提出采用保护层和非氧硅化物牺牲层以提高薄膜探测能力。Amorphous Ti films for uncooled infrared detectors with the TCR overmatch of 0.25% were successfully prepared on different structural substrates by the method of quickly evaporating and cooling the substrates. The effects of oxygen on the resistance of films and that of components on performance are characterized. The experimental results show that Ti with lower valence is better for uncooled infrared detectors. It is proposed that the protecting layer and the sacrificial layer with non-oxidative silicide can be applied to improve the detectivity.

关 键 词：室温红外探测 红外探测材料 微测辐射热计 Ti薄膜 非晶薄膜 

分 类 号：TN213[电子电信—物理电子学]