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作 者:秦明礼[1] 曲选辉[1] 黄化[1] 杜学丽[1]
机构地区:[1]北京科技大学材料科学与工程学院,北京100083
出 处:《粉末冶金材料科学与工程》2009年第5期343-346,共4页Materials Science and Engineering of Powder Metallurgy
基 金:国家自然科学基金资助项目(50802006);国家重点基础研究发展规划(973计划)资助项目(2006CB605207)
摘 要:氮化铝(AlN)陶瓷具有热导率高、热膨胀系数低、电阻率高等特性以及良好的力学性能,被认为是新一代高性能陶瓷基片和封装的首选材料,为了满足微电子技术发展对微型复杂形状高导热陶瓷零部件用量日益增加的需求,该文作者研究利用粉末注射成形技术制备高导热AlN陶瓷零部件。该技术以AlN粉末为原料,加入5%Y2O3为烧结助剂;选用蜡基粘结剂体系(PW+PP+SA),确定粉末装载量为62%(体积分数),注射温度为160~170℃,注射压力为90~100MPa;采用溶剂脱脂+热脱脂工艺脱脂;在1850℃流动氮气氛中烧结。所制备出的AlN陶瓷热导率达232.4W/(m·K)。Aluminum nitride(AlN) has attracted much attention as advanced electronic packaging and ceramic substrates due to its remarkable properties, including high thermal conductivity, low thermal expansion coefficient, high electrical resistivity and good mechanic property. In order to satisfy the demand in micro electronic fields for small and complex shape AlN parts, AlN ceramic was produced by powder injection molding(PIM) process, using AlN powder and 5% Y2O3 sintering aid agent as raw materials, selecting wax-based polymer (PW +PP+ SA) as binder, determing the powder loading of 62% (volume fraction), the injection temperature of 160-170 ℃ and the injection pressure of 90- 100 MPa. The components of the binder in the injection compacts were removed using the solvent degreasing followed by thermal degreasing process. The degreased specimen was sintered at 1 850℃ in a flowing nitrogen gas. The thermal conductivity of the sintered sample reaches 232.4 W/(m.K), and the density is 3.29 g/cm3.
分 类 号:TB484.5[一般工业技术—包装工程]
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