射频溅射沉积不同厚度Ca膜退火直接形成Ca_2Si膜(英文)  

Selective Growth of Ca_2Si Film by Annealing the Sputtered Ca Films with Different Thickness

作　　者：杨吟野[1,2] 谢泉[1] 

机构地区：[1]贵州大学电子科学与信息技术学院,贵州贵阳550025 [2]贵州民族学院物理系,贵州贵阳550025

出　　处：《材料科学与工程学报》2009年第5期675-678,共4页Journal of Materials Science and Engineering

基　　金：National Natural Science Foundation of China(60766002);Foundation of Science Technology Department of Guizhou Province((2007)2177);Key Foundation of Education Department of Guizhou(2006212);Carving out Foundation of University Man of Science and Technology Office of Guiyang((2006)21-4).

摘　　要：使用射频磁控溅射系统在恒定溅射功率、Ar气压和Ar气流流量下,在Si(100)衬底上,分别沉积不同厚度的Ca膜。随后,800℃真空退火45分钟、1小时和1.5小时。半导体钙硅化物,即立方相的Ca2Si膜和简单正交相的Ca2Si膜首次、单独、直接生长在Si(100)衬底上。实验结果指明在多相共生的Ca-Si化合物中,Ca膜的沉积厚度、因溅射而生长的Ca-Si化合物的生长厚度决定了某一个单相的钙硅化物独立的生长。另外,退火温度为800℃时,有利于单相钙硅化物的独立生长。并且,退火时间也是关键因素。Ca films with different thickness,were deposited directly on Si（100） substrates by using a radio frequency（R.F.） magnetron sputtering system（MS） and then were annealed at 800℃ for 45min,60min and 90min in a vacuum furnace for interdiffusing the deposited ions,atoms and clusters and Si atoms.The structural and morphological features of the films were tested by X-ray diffractometry（XRD）,scanning electron microscopy（SEM） and energy dispersive analysis of X-rays（EDAX）.The cubic Ca2Si and the orthorhombic Ca2Si were grown directly and individually on Si（100） substrates for the first time.The experimental results indicate that the selective growth of a single phase Ca-silicide depends on the growth thickness and depositing thickness by sputtering.Besides,800℃ is the adaptive annealing temperature for growing Ca2Si films.Additionally,annealing time is also a principal factor for growing Ca2Si films.

关 键 词：Ca2Si 晶核形成 半导体硅化物 退火 磁控溅射 

分 类 号：TN304.055[电子电信—物理电子学]