低温条件下金属薄膜外延生长过程中瞬时扩散机制的研究  

A study of transient diffusion mechanism in low-temperature epitaxy process of thin metal films

作　　者：岳岩[1] 霍裕昆[1] 潘正瑛[1] 

机构地区：[1]复旦大学,上海200433

出　　处：《核技术》1998年第10期577-581,共5页Nuclear Techniques

基　　金：国家自然科学基金;国家教委博士点基金资助

摘　　要：采用分子动力学方法和混合的紧束缚势模拟了Cu在Cu(100)表面外延生长过程的初始阶段.重点研究低温条件下外延表面原子的瞬时扩散机制.对瞬时扩散运动进行分类检验,并定量报道了各类瞬时扩散过程在低温条件下的相对发生比例.由此得知:轰击引起的级联扩散机制对外延表面原子的扩散活性起重要作用.同时在模拟中还观察到了温度低至100K时的衍射强度振荡,显示了该成膜初始阶段是一个以原子层为尺度的准逐层生长过程.The transient diffusion processes in low-temperature epitaxial growth of Cu thin film on Cu(100) have been studied and classified by using molecular dynamics simulations with a hydrid tight-binding-like potential. The statistics indicate that the noticeable contribution to the surface mobility of adatoms comes from the impact cascade diffusion mechanism. Meanwhile, the observed oscillations of diffraction intensity show that a quasi layer-by-layer growth may take place at the temperature as low as 100K in the initial stage of thin-film formation.

关 键 词：分子动力学 瞬时扩散机制 低温外延 薄膜生长 

分 类 号：O484.1[理学—固体物理]