平整度对细Al丝超声引线键合强度的影响  

Effect of Substrate Surface Smoothness on Thin Al Wire Wedge Bonding Strength

作　　者：席俭飞[1] 张方晖[1] 

机构地区：[1]陕西科技大学电气与信息工程学院,西安710021

出　　处：《半导体技术》2009年第11期1070-1073,共4页Semiconductor Technology

基　　金：温州市科技局项目(H20080004);陕西科技大学研究生创新基金

摘　　要：为避免双键合点破坏性拉力实验不易准确的缺陷和剪切力测试不能评价键合点整体特性的缺陷,采用了破坏性单键合点的测试方法。在尽量排除其他干扰因素的情况下,通过实验比较了10种不同平整度条件下细Al丝超声引线键合的结果。结果表明,平整度对超声引线键合的强度有影响,随着平整度的提高,键合强度和稳定度也随之提高。实际测试键合拉力时发现,键合良好断裂点均在跟键(heel)处,采取补强的方式使1.25 mil(3.125×10-3cm)细Al丝超声键合后的键合强度均值可以达到0.1568 N。分析了以上实验现象产生的原因,探讨了键合强度形成的机理。Destructive single bond test was adopted for the imprecision of the destructive double bond test and the shear strength test can not estimate the whole characteristic of the bond. 10 groups of experimental results were compared with different substrate surface smoothness while other factors were omitted. The experimental results show that the higher the surface smoothness of the substrate, the bigger the bond strength and the higher the bond stability. Besides that the thickness and area of atomic diffusion is not large enough in the interface between A1 wire and substrate. It is found that all the breakpoints occur at the heel when the bonding wire is pulled. The average bond strength of 1.25 mil （3.125 × 10^-3 cm） thin A1 wire is up to 0. 156 8 N through strengthening. The reason of the experimental phenomenon and the mechanism of the bond strength were analyzed.

关 键 词：超声引线键合 平整度 细铝丝 键合强度 

分 类 号：TN305.96[电子电信—物理电子学]