Strain distributions and electronic structure of three-dimensional InAs/GaAs quantum rings  

作　　者：刘玉敏 俞重远 贾博雍 徐子欢 姚文杰 陈智辉 芦鹏飞 韩利红 

机构地区：[1]Institute of Optical Communication and Optoelectronics [2]Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications),Ministry of Education

出　　处：《Chinese Physics B》2009年第11期4667-4675,共9页中国物理B（英文版）

基　　金：Project supported by the National High Technology Research and Development Program of China (Grant No 2009AA03Z405);the National Natural Science Foundation of China (Grant Nos 60908028 and 60971068);the High School Innovation and Introducing Talent Project of China (Grant No B07005)

摘　　要：This paper presents a finite element calculation for the electronic structure and strain distribution of self-organized InAs/GaAs quantum rings. The strain distribution calculations are based on the continuum elastic theory. An ideal three-dimensional circular quantum ring model is adopted in this work. The electron and heavy-hole energy levels of the InAs/GaAs quantum rings are calculated by solving the three-dimensional effective mass SchrSdinger equation including the deformation potential and piezoelectric potential up to the second order induced by the strain. The calculated results show the importance of strain and piezoelectric effects, and these effects should be taken into consideration in analysis of the optoelectronic characteristics of strain quantum rings.This paper presents a finite element calculation for the electronic structure and strain distribution of self-organized InAs/GaAs quantum rings. The strain distribution calculations are based on the continuum elastic theory. An ideal three-dimensional circular quantum ring model is adopted in this work. The electron and heavy-hole energy levels of the InAs/GaAs quantum rings are calculated by solving the three-dimensional effective mass SchrSdinger equation including the deformation potential and piezoelectric potential up to the second order induced by the strain. The calculated results show the importance of strain and piezoelectric effects, and these effects should be taken into consideration in analysis of the optoelectronic characteristics of strain quantum rings.

关 键 词：quantum ring strain distribution electronic structure 

分 类 号：O471.1[理学—半导体物理]