Localized electronic states in gaps on hole-net structures of silicon  

作　　者：黄伟其 吕泉 张荣涛 王晓允 于示强 

机构地区：[1]Key Laboratory of Photoelectron Technology and Application,Guizhou University

出　　处：《Chinese Physics B》2009年第11期5066-5071,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant No 10764002)

摘　　要：Hole-net structure silicon is fabricated by laser irradiation and annealing, on which a photoluminescence （PL） band in a the region of 650-750 nm is pinned and its intensity increases obviously after oxidation. It is found that the PL intensity changes with both laser irradiation time and annealing time. Calculations show that some localized states appear in the band gap of the smaller nanocrystal when Silo bonds or Si-O-Si bonds are passivated on the surface. It is discovered that the density and the number of Si=O bonds or Si-O-Si bonds related to both the irradiation time and the annealing time obviously affect the generation of the localized gap states of hole-net silicon, by which the production of stimulated emission through controlling oxidation time can be explained.Hole-net structure silicon is fabricated by laser irradiation and annealing, on which a photoluminescence （PL） band in a the region of 650-750 nm is pinned and its intensity increases obviously after oxidation. It is found that the PL intensity changes with both laser irradiation time and annealing time. Calculations show that some localized states appear in the band gap of the smaller nanocrystal when Silo bonds or Si-O-Si bonds are passivated on the surface. It is discovered that the density and the number of Si=O bonds or Si-O-Si bonds related to both the irradiation time and the annealing time obviously affect the generation of the localized gap states of hole-net silicon, by which the production of stimulated emission through controlling oxidation time can be explained.

关 键 词：hole-net silicon passivated bonds localized gap states 

分 类 号：O471[理学—半导体物理]