非晶态Se薄膜晶化过程中微裂纹产生的研究  

Study on Generation of Micro-Cracking During Crystallization of Se Thin Film

作　　者：叶水驰[1] 鲍海飞[1] 蓝幕杰 王骐 

机构地区：[1]哈尔滨工业大学航天电子与光电工程系

出　　处：《材料科学与工艺》1998年第3期77-80,共4页Materials Science and Technology

摘　　要：薄膜在热处理过程中存在微观结构的变化。利用光学显微镜对非晶态Ｓｅ薄膜在晶化过程中微裂纹的产生做了详细的分析和研究；利用位形坐标解释了非晶薄膜室温下转变的原因。并对三层结构的ＳｉＯ／Ｓｅ／ＳｉＯ的晶化做了进一步研究。结果表明微裂纹的产生与晶化过程中原子重新排序、原子迁移导致晶界的产生和体积收缩产生的应力有关，裂纹的产生还同薄膜与衬底间的热失配有关。There are changes in the thin film during thermal treatment. The generation of micro-cracking during crystallization of amorphous Se thin film was studied. The configuratonal coordination energy diagram was used to explain the reason of the amorphous transition during storing at room temperature. The crystallization of thilayer's structure SiO/Se/SiO was also anayzed. The results showed that generation of micro-cracking is related to the grain boundary and the stress produced by volume contraction during crystallzation because of the atoms reordering and moving, and the thermal strain between the thin film and the substrate, is another important factor.

关 键 词：微裂纹 位形坐标晶化 非晶态 薄膜 晶化 硒 

分 类 号：TN304.130[电子电信—物理电子学] TN304.055