含硼金刚石与普通金刚石半导体性及抗氧化性比较  

Comparison of the semiconductor and antioxidant properties between boron-doped diamonds and ordinary diamonds

作　　者：宫建红[1,2,3] 林淑霞[1] 阮立群[4] 高军[1] 

机构地区：[1]山东大学威海分校机电工程学院,山东威海264209 [2]山东大学机械工程博士后流动站,山东济南250061 [3]山东省超硬材料工程技术研究中心,山东邹城273500 [4]熊本大学自然科学研究科机械系统,日本8608555

出　　处：《功能材料》2009年第11期1877-1879,共3页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(50772060);山东省博士后创新项目专项基金资助项目(200702024)

摘　　要：通过在铁基合金中加入硼粉的方法,制成含硼量0.2%(质量分数)的Fe-Ni-C-B系触媒,用静压法合成含硼金刚石。研究了普通金刚石和含硼金刚石的形貌、晶体结构、电阻-温度曲线和抗氧化性。实验表明,合成的含硼金刚石具有良好的半导体性,电离能ΔE=0.368eV;起始氧化温度比普通金刚石高185℃,耐热性明显改善。此方法为低成本、大批量的制备半导体金刚石提供了新的途径。Abstract. In present paper, boron-doped diamond was synthesized by static pressure method using Fe-Ni-C-B system catalyst. The catalyst was made of iron, base alloy added boron powder and the boron weighs 0.2%. The boron-doped diamonds were compared with ordinary diamonds on the morphology, crystal structure, resistancetemperature characteristic curve and oxidative stability. Experiments prove that the boron-doped diamonds are semiconductor materials, whose ionization energy is 0. 368eV; and initial oxidation temperature of boron-doped diamonds is 185 degrees celsius, which is higher than that of ordinary diamond.

关 键 词：金刚石 硼 半导体性能 抗氧化性 

分 类 号：TQ164[化学工程—高温制品工业]