分子束外延HgCdTe薄膜的CdTe缓冲层特性研究  

The Study on the Properties of CdTe Buffer Layer for MBE HgCdTe Epilayer

作　　者：宋立媛[1] 唐利斌[1] 李艳辉[1] 孔令德[1] 陈雪梅[1] 

机构地区：[1]昆明物理研究所,云南昆明650223

出　　处：《红外技术》2009年第11期628-630,633,共4页Infrared Technology

基　　金：装备预先研究项目

摘　　要：CdTe是GaAs衬底上分子束外延(MBE)HgCdTe薄膜时的缓冲层,引入缓冲层的目的是减小失配位错,CdTe缓冲层的生长直接影响到后续HgCdTe薄膜的制备质量,然而目前现有文献鲜有报道CdTe缓冲层的最佳厚度。采用X射线双晶衍射、位错腐蚀坑密度(EPD)、FT-IR和椭圆偏振光谱的方法,从CdTe缓冲层厚度对位错密度的影响入手,分析并确定了理想的CdTe缓冲层厚度。CdTe is the buffer layer of GaAs substrate for HgCdTe epilayer grown by MBE, The purpose for introduction of buffer layer is to decrease the mismatched dislocation, the growth of CdTe buffer layer directly affects the quality of following grown HgCdTe thin film. However, up to now only few papers have reported the optimum thickness for CdTe buffer layer. By using of X-ray double crystal diffraction, EPD, FT-IR as well as spectroscopic ellipsometry the paper has studied the effects of the thickness on EPD for CdTe buffer layer, the optimum thickness of CdTe buffer layer has been obtained.

关 键 词：分子束外延 CdTe缓冲层 位错密度 

分 类 号：TN213[电子电信—物理电子学]