分压控制下高纯、高x值CdZnTe晶体气相生长的研究  

A Study on Cd 1- x Zn x Te Crystal with High Purity and High x under Controlled Patial Pressures Prepared by Physical Vapor Transport

作　　者：钱永彪[1] 桑文斌[1] 王林军[1] 史伟民[1] 闵嘉华[1] 吴汶海[1] 

机构地区：[1]上海大学嘉定校区无机材料系

出　　处：《红外技术》1998年第6期17-21,16,共6页Infrared Technology

基　　金：国家自然科学基金;上海市教委发展基金

摘　　要：尝试采用布里奇曼法生长ＣｄＺｎＴｅ为原材料进行了高ｘ值（ｘ＝０．０４～０．６０）Ｃｄ１－ｘＺｎｘＴｅ晶体在压力控制下的物理气相输运（ＰＶＴ）生长研究。探讨了Ｃｄ源和ＣｄＺｎ合金温度对晶体电学性质的影响。并对ＰＶＴ晶体的纯度、位错坑密度、纵向组成分布以及红外透过率、ＰＬ光谱等进行了检测和分析。Growth of Cd 1- x Zn x Te with high x(x =0.040～0.60) was carried out under control of consistent partial pressures by PVT, during which polycrystals of CdZnTe grown by Bridgeman technique was used as source materials. The effect of the temperature of Cd source on the electrical properties of the crystal was studied. and purity, EPD, IR and PL spectrum of the crystals grown by PVT were investigated.

关 键 词：PVT生长 核探测器 红外光学材料 晶体生长 

分 类 号：TN213.05[电子电信—物理电子学]