HgCdTe离子注入掺杂及损伤特性  

Doping and Damaging Characteristics of HgCdTe by Ion Implantation

作　　者：刘心田[1,2] 包昌珍[1,2] 褚君浩[1,2] 周茂树 李韶先 

机构地区：[1]中国科学院上海技术物理所红外物理国家实验室 [2]航天工业总公司三院

出　　处：《红外技术》1998年第6期22-24,共3页Infrared Technology

摘　　要：运用红外反射谱，背散射谱和二次离子质谱等方法研究ＨｇＣｄＴｅ注入Ｂ、Ｐ、Ｉｎ和Ａｓ等元素的掺杂与损伤特性。The methods of infrared reflective spectra(IRRS), Rutherford back scatting(RBS) and secondary ion mass spectrometry(SIMS) were used to study doping and damging effects on HgCdTe, which is induced through B +,P +,In + and As + ions implantation.

关 键 词：碲镉汞 离子注入 表面损伤 红外探测器 

分 类 号：TN215.05[电子电信—物理电子学]