GaAs脊形量子线发光性质的光致发光谱研究  

PL Characterizations of GaAs Ridge QWRs Structures Grown by MBE on Nonplanar Substrates

作　　者：牛智川[1] 袁之良[1] 周增圻[1] 徐仲英[1] 王守武[1] 

机构地区：[1]中国科学院半导体研究所

出　　处：《Journal of Semiconductors》1998年第11期871-876,共6页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：本文报道了用ＭＢＥ非平面生长方法制备的ＧａＡｓ脊形量子线发光性特实验研究．低温、微区、变温和极化光致发光谱等的测试分析表明：这种由｛１１３｝面构成的脊形量子线具有发光各向异性、激子束缚能明显大于侧面量子阱等特点．Abstract GaAs ridge quantum wires(QWRs) structures have been successfully fabricated by MBE growth on GaAs (001) stripe etched substrates. Scanning electron microscopy measurement show the ridge QWRs formed with {113} side facets. The photoluminescence (PL) spectra measurements clearly evidence the lateral carrier confinement effects in the ridge QWRs. Low temperature PL spectra obtained with and without focused laser beam indicate an energy blue shift of 20meV, which is consistent with the calculated value using Kronig Penney model. The polarized and temperature dependent PL spectra reveal anisotropic emission characterization of the QWRs structures, and higher bind energies of excitons in QWRs than that in the side QWs.

关 键 词：砷化镓 光致发光谱 量子线 管 发光特性 

分 类 号：TN304.23[电子电信—物理电子学]