Cu-In合金硒化法制备CuInSe_2薄膜  

Preparation of CuInSe_2 Thin Films by Selenization of Cu-In Alloys

作　　者：欧铜钢[1,2] 谭艳芳[1,2] 王建兴[1,2] 周兆锋[1,2] 潘勇[1,2] 

机构地区：[1]湘潭大学材料与光电物理学院,湘潭411105 [2]湘潭大学低维材料及其应用技术教育部重点实验室,湘潭411105

出　　处：《材料导报》2009年第22期90-92,共3页Materials Reports

基　　金：湖南省科技厅重点项目(2007GK3064)

摘　　要：采用三电极体系恒电压电沉积法制备了Cu-In薄膜,经硒化退火生成CuInSe2薄膜。采用循环伏安法研究了电沉积Cu-In的循环伏安特性,确定其最佳沉积电位在-0.75V左右,Cu与In的化学计量比为1.1,达到了理想前驱体的Cu与In的化学计量比。研究了不同沉积电位下材料组成、结构与性能的影响。硒化后,Cu与In的化学计量比为1.1时形成了比较单一的CuInSe2黄铜矿相结构。Thin films of copper indium selenizate （CuInSe2） are grown on Mo substrates by selenization of Cu- In precursors are prepared by electrodeposition. Firstly the electrodeposition and of Cu-In alloy is studied by the methods of cyclic voltammetry. The results show that the optimum potentials for electrodeposition is about -- 0. 75V（vs SCE）, it is observed that the Cu/In atomic ratio is 1.1. Cu-In thin films are prepared at different deposition potentials. The influences of composition and ctructure on the propenties are investigated. After selenization, stoichiometric CIS films with a single chalcopyrite phase are synthesized from Cu-In precursors.

关 键 词：电沉积 Cu—In CUINSE2 硒化 

分 类 号：TN304.055[电子电信—物理电子学] TN304.26