高精度低温度系数带隙基准电压源的设计  

A Precise Bandgap Voltage Reference With Low Temperature Coefficient

作　　者：李新[1] 洪婷[1] 高加亭[2] 

机构地区：[1]沈阳工业大学,沈阳110023 [2]中国电子科技集团公司第四十七研究所,沈阳110032

出　　处：《微处理机》2009年第5期13-15,共3页Microprocessors

摘　　要：基于0.5μm双层多晶双层铝CMOS工艺,采用共源共栅电流镜结构和基极电流补偿方法,设计了一种新颖的高性能带隙电压基准。结果表明,在温度-25℃-125℃范围,基准电压温度系数为15.3×10-6V/℃,低频时,电源抑制比可达-80db。该电路可做为A/D和D/A转换器中的基准电压源。A high precise bandgap reference based on base current cancellation was presented,in which 0.5μm CMOS double poly double metal model was used.In the design,the cascode current mirror was used in the circuit and base current cancellation was realized.The simulation results show that the output voltage is with 15.3×10-6V/℃ at-25℃～125℃,and the PSRR can be reach-80db at low frequence.This circuit can be used as voltage reference in A/D and D/A converter.

关 键 词：共源共栅 基极电流补偿 带隙电压基准 

分 类 号：TN4[电子电信—微电子学与固体电子学]