Ce掺杂Ba_(0.6)Sr_(0.4)TiO_3薄膜表面结构XPS研究  

Surface Structures of Ce-Doped Ba_(0.6)Sr_(0.4)TiO_3 Films by X-Ray Photoelectron Spectroscopy

作　　者：廖家轩[1] 潘笑风[1] 王洪全[1] 张佳[1] 傅向军[1] 田忠[1] 

机构地区：[1]电子科技大学,四川成都610054

出　　处：《稀有金属材料与工程》2009年第11期1987-1991,共5页Rare Metal Materials and Engineering

基　　金：电子科技大学中青年学术带头人培养计划项目(Y02018023601053);博士点基金项目(20060614021);四川省应用基础研究项目(2008JY0057);国防预研基金项目(9140A10030606)资助

摘　　要：用改进的溶胶-凝胶法制备铈(Ce)掺杂和非掺杂2种钛酸锶钡(Ba0.6Sr0.4TiO3,BST)薄膜,用X射线光电子能谱(XPS)研究薄膜的表面结构。XPS结果表明,BST薄膜的表面结构由钙钛矿结构和非钙钛矿结构组成,铈掺杂显著地减少了非钙钛矿结构。扫描电镜及原子力显微镜观察表明,掺杂BST薄膜光滑致密无裂纹。电压-电容曲线表明,掺杂BST薄膜的介电性能大幅度提高,在40V外加电压下介电调谐率达60.8%,零偏压下的介电损耗为0.0265。同时,就非钙钛矿结构的成因及Ce掺杂BST薄膜的有关改善机制进行了讨论。Cerium （Ce）-doped barium strontium titanate （Ba0.6Sr0.4TiO3, BST） films and undoped BST films have been prepared by an improved Sol-gel method. The surface structures have been studied by X-ray photoelectron spectroscopy （XPS）. The result reveals that the surface structures are composed of perovskited structure and non-perovskited structure, and the Ce doping significantly reduces the non-perovskited structure. It is by scanning electron microscope and atomic force microscope shown that the Ce-doped BST films are smooth and compact without crack or shrinkage cavity, which are associated with the formation of the non-perovskited structure. The voltage-capacitance curves demonstrate that the Ce-doped BST films have significant improvement in dielectric properties with a tunability of more than 60.8% at 40 voltage, and a dielectric loss （tanσ） of 0.0265 at zero bias. The improved mechanism of Ce doping is discussed.

关 键 词：铈掺杂 钛酸锶钡薄膜 钙钛矿结构 介电性能 

分 类 号：TN304.055[电子电信—物理电子学]