电致发光成像在晶体硅电池和组件质量监测中的应用  

The application of electroluminescence imaging to quality monitor in crystalline silicon cells and modules

作　　者：杨畅民[1] 张豪[1] 黄国锋 

机构地区：[1]西安理工大学理学院 [2]陕西众森电能科技公司

出　　处：《中国建设动态（阳光能源）》2009年第6期42-43,45,共3页

摘　　要：本文根据晶体硅光伏电池的电致发光成像理论,采用红外相机拍摄观测晶体硅光伏电池的电致发光图像。在大量实验中选取了一些典型图像,如硅片材料内在缺陷,烧结、污染、刻蚀引入的缺陷以及短路、裂纹、断栅等缺陷。实验结果表明,电致发光成像检测方法结合I-V测试方法,可以更快速、准确地找到缺陷位置及判定缺陷类型、成因,对监测晶体硅光伏电池及组件的生产工艺具有重要意义。In this paper, the electroluminescence （ EL ）imaging of crystalline silicon cell was observed by infrared camera according to the theory of EL imaging. From a large amount of experiment results ,the typical EL images were chosen such as intrinsic defects in silicon wafer, introduced dejects by agglomeration, stain and eroding etc, and other defects of short circuit,crack and break bar etc. From the experiment results, the pasitions , styles and causations of defects can be detected and judged rapidly and accurately using the measurement method combining of EL imaging and I-V. The measurement method combining of EL imaging and I-V in full processing stage is ideally suited for inline detection in the PV industry.

关 键 词：电致发光成像 晶体硅电池 缺陷检测 

分 类 号：TM914.4[电气工程—电力电子与电力传动] TS201.6[轻工技术与工程—食品科学]