一种集成纳米金柱结构的神经薄膜微电极阵列(英文)  

A Thin-Film Au-Nanorods Microelectrode Array for Neural Prosthesis

作　　者：周洪波[1,2] 李刚[1] 朱壮晖[1,3] 周亮[1,2] 孙晓娜[1,2] 金庆辉[1] 赵建龙[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所 [2]中国科学院研究生院 [3]中国科学院研究生院,北京100039

出　　处：《纳米技术与精密工程》2009年第6期548-552,共5页Nanotechnology and Precision Engineering

基　　金：国家重点基础研究发展计划(973计划)资助项目(2005CB724305);上海市自然科学基金资助项目(07ZR14134);中科院上海微系统所青年科技创新基金资助项目(2008QNCX02)

摘　　要：在神经假体系统中,神经微电极是实现信号检测以及激励任务的重要组成部分.然而,神经微电极由于尺寸微小,往往具有很高的电极/组织界面阻抗.本文提出了一种在电极位点表面处集成纳米结构来增大电极有效表面积的方法.这种方法结合了光刻、局部氧化铝以及电子束蒸发等技术,在薄膜微电极的表面集成了纳米金柱结构.最后,本文测试和评价了此微电极的表面形貌以及电学性能.实验结果表明,这种集成有纳米金柱结构的微电极其界面阻抗降低了约25倍,促进了这种微电极在神经工程领域的广泛应用.In neural prosthetic systems, a low-impedance electrode-tissue interface is important for maintaining signal quality for recording and the effective charge transfer for stimulation. However, neural mieroelectrodes often have high impedance due to their small surface size. In this paper, a simple method for increasing the effective surface area by introducing nanostructures on the electrode sites has been presented. The method combines photolithography and electron-beam evaporation with a locally-patterned anodized porous alumina （APA） template to integrate Au-nanorod arrays on the thin-film microelectrode. The geometrical and electrical properties of the Au-nanorod electrodes have been evaluated and compared with the conventional planar microelectrodes. Experimental results show that approximately 25 times lower interface impedance has been achieved for this nanostructured microelectrode. Such Au-nanorod integrated microelectrode array is a promising tool for neural engineering.

关 键 词：多孔氧化铝 神经电极 电子束蒸发 纳米柱 

分 类 号：TB383.1[一般工业技术—材料科学与工程]