微通道散热大功率半导体激光器研究  

Study of Micro-Channel Cooling High Power Semiconductor Laser

作　　者：黄科[1] 杨红伟[1] 车相辉[1] 彭海涛[1] 王媛媛[1] 徐会武[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《微纳电子技术》2009年第11期656-659,共4页Micronanoelectronic Technology

摘　　要：基于GaInAs/AlGaAs应变量子阱大光腔结构激光器芯片和无氧铜微通道热沉,采用In焊料烧结工艺,制作了976nm大功率连续激光器单条。在20℃热沉冷却条件下,输入电流110A时,输出功率104.9W,电光转换效率达到最大值64%。输入电流300A时,输出功率276.6W,电光转换效率达到54.2%。对激光器单条的热阻以及特征温度进行了测试分析,根据分析结果模拟了激光器单条在大电流下的输出特性,模拟结果显示热饱和是限制激光器最大输出功率的原因。因此,为了提高大功率激光器的输出功率,需要进一步提高激光器的特征温度,并降低热阻以改善散热情况。Based on the GaInAs/AlGaAs strained quantum well structure of large optical cavity laser chip and the oxygen-free copper micro-channel heat sink,the 976 nm high-power laser bar was fabricated by In solder sintering process. In the 20 ℃ cooling conditions,the output power is 104.9 W and the maximum electro-optical conversion efficiency reaches 64% when the input current is 110 A;the output power is 276.6 W and electro-optical conversion efficiency reaches 54.2% when the input current is 300 A.The thermal resistance and characteristic temperature of the laser bar were tested and analyzed.Based on the analyzing results,the output current characteristics of the laser bar in the large current was simulated.Simulation results show that thermal saturation will limit the maximum laser output power. Therefore,in order to improve the high-power laser output power,it is need to further improve the characteristic temperature of lasers and to reduce the thermal resistance to improve the heat situation.

关 键 词：大功率半导体激光器 大光腔结构 微通道热沉 电光转换效率 热阻 特征温度 

分 类 号：TN248.4[电子电信—物理电子学]