PECVD制备非晶硅薄膜的研究  

Study of Amorphous Silicon Thin Films by PECVD

作　　者：顾卫东[1] 胥超[1] 李艳丽[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《微纳电子技术》2009年第11期664-666,共3页Micronanoelectronic Technology

摘　　要：实验采用等离子体增强化学气相沉积(PECVD)法在Si衬底上制备了非晶硅薄膜。研究了射频功率、PH3掺杂浓度等因素对薄膜电阻率以及应力的影响。实验结果表明,对于非掺杂非晶硅薄膜,当射频功率从15W增加到45W时,薄膜应力从张应力变化到压应力,在射频功率为35W时,应力几乎为零,应力绝对值先降低后增加,淀积速率随着射频功率的增加而增加;对于掺杂非晶硅薄膜,电阻率随着PH3掺杂浓度的增加而降低,当PH3流量从0cm3/min增加到12cm3/min时,薄膜掺杂效果明显,电阻率降低3个数量级,继续增加PH3流量,电阻率变化较小,而应力随着PH3掺杂浓度的增加而降低,当PH3流量超过12cm3/min时,应力有增加的趋势。Amorphous silicon thin films were deposited on silicon substrates using the PECVD method.The effects of the RF power and PH3 doped concentration on the resistivity and stress of the film were studied.The results show that the stress of the undoped amorphous silicon film turns tensile to compress when the RF power increases from 15 W to 45 W,the stress is nearly 0 MPa when the power is 35 W,the absolute value decreases firstly and increases later and deposition rate increases with the increase of RF power. The stress and resistivity of the doped amorphous silicon film decrease with the increase of the PH3 doped concentration. When the flow rate of PH3 increases from 0 to 12 cm3/min,the doped effect of film is obvious and the resistivity decreases three orders.The resistivity changes little with the flow rate of PH3 increasing conti-nuously.The stress has tend to increase when the flow rate of PH3 exceeds 12 cm3/min.

关 键 词：等离子体增强化学气相沉积 非晶硅 应力 射频功率 掺杂 电阻率 

分 类 号：TN304.055[电子电信—物理电子学]