CF-(4)气氛中生长KMgF-(3)晶体的研究  

KMgF_3 crystal grown under CF_4 atmosphere

作　　者：那木吉拉图[1] 阮永丰[2] 苏小平[1] 杨海[1] 杨鹏[1] 李楠[1] 

机构地区：[1]北京有色金属研究总院北京国晶辉红外光学科技有限公司,北京100088 [2]天津大学理学院物理系,天津300072

出　　处：《激光技术》2009年第6期579-581,共3页Laser Technology

摘　　要：为了获得高质量的 KMgF_3晶体,采用提拉法,在 CF_4气氛中进行了晶体生长。对生长过程中的挥发物和结晶余料进行了物相分析,并测试了晶体红外透射光谱。由测试结果可知,晶体生长过程中的主要挥发物为 KF,析晶率较大时的结晶余料中出现 MgF_2相,红外光谱中未出现 OH^-的吸收,但 COH 的吸收比较明显。结果表明,CF_4气氛有利于KMgF_3晶体生长过程中 H_2O 等氧源的消除,生长过程中有效地抑制 KF 的挥发并适当地补充 KF,是 KMgF_3晶体生长中不可忽略的问题。In order to obtain high-quality KMgF3 crystal, it was grown by Czoehralski method in the CF4 atmosphere. The volatiles and remainders of the crystal growth were analyzed, and the infrared transmission spectrum of the crystals was measured. The main volatile matter is KF, and there is MgF2 phase in the remainders while crystallization rate is high. In the infrared transmission spectrum there is no OH^- absorption, but COH absorption is obvious. Above results display that CF4 atmosphere is favorable for eliminating oxygen source of the growth atmosphere, such as H2O etc. To get high quality KMgF3 crystal , it is not negligible to inhibit the volatility of KF effectively and to replenish KF suitably in the crystal growth.

关 键 词：材料 晶体生长 提拉法 红外光谱 CF4气氛 KMgF3晶体 

分 类 号：TQ131.11[化学工程—无机化工]