气体压力对铝基体上氮化铝薄膜残余应力的影响  

Effect of Gas Pressure on Residual Stress in AlN Film Deposited on Al Substrates

作　　者：田竞[1] 王惠光[1] 叶荣茂[1] 安阁英[1] 英崇夫 日下一也 

机构地区：[1]哈尔滨工业大学,哈尔滨150001 [2]德岛大学工学部

出　　处：《宇航材料工艺》1998年第5期41-43,共3页Aerospace Materials & Technology

基　　金：黑龙江省自然科学基金;哈尔滨工业大学回国人员基金

摘　　要：利用阴极溅射方法在铝合金表面沉积氮化铝薄膜。利用X射线研究了沉积过程中气体压力的变化对氯化铝薄膜结晶的择优取向及薄膜内应力的影响。结果表明：在较低压力沉积的氮化铝薄膜有良好的择优取向性；氮化铝薄膜残余应力为压应力，且随气体压力增加而逐渐变化。AlN films were prepared on hi alloy substrates by cathode sputtering, and the effect of gas pressure on crystal orientation and residual stress in AlN films was investigated by X-ray diffraction. Results show that AlN films deposited at low gas pressure have good selective orientation,and compressive residual shes increased with gas pressure is found in the films.

关 键 词：氮化铝 薄膜 残余应力 阴极溅射 气体压力 

分 类 号：TG174.442[金属学及工艺—金属表面处理]