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机构地区:[1]School of Physics Science and Technology,Central South University
出 处:《Optoelectronics Letters》2009年第6期422-426,共5页光电子快报(英文版)
基 金:supported by the Grand Special Projects of Hunan Science and Technology Department of China (No. 08FJ1002)
摘 要:The model of monocrystalline silicon solar cells is established,and the effects of wafer parameters,such as the p-Si(100) substrate thickness,the defect density,and the doping concentration,on the electronic properties of monocrystalline silicon solar cells are analyzed.The results indicate that the solar cells with an Al back-surface-field will have good electronic properties when the wafers meet the following three conditions:(i) the defect density is less than 1.0×1011 cm-3;(ii) the doping concentration is from 5×1015 cm-3 to 1×1017 cm-3,i.e.the bulk resistivity is from 0.5 Ω·cm to 10 Ω·cm;(iii) the cells substrate thickness is in the range of 100 μm to 200 μm.The model of monocrystalline silicon solar cells is established,and the effects of wafer parameters,such as the p-Si(100) substrate thickness,the defect density,and the doping concentration,on the electronic properties of monocrystalline silicon solar cells are analyzed.The results indicate that the solar cells with an Al back-surface-field will have good electronic properties when the wafers meet the following three conditions:(i) the defect density is less than 1.0×1011 cm^-3;(ii) the doping concentration is from 5×10^15 cm^-3 to 1×10^17 cm^-3,i.e.the bulk resistivity is from 0.5 Ω·cm to 10 Ω·cm;(iii) the cells substrate thickness is in the range of 100 μm to 200 μm.
关 键 词:单晶硅太阳能电池 电子性质 硅(100) 掺杂浓度 缺陷密度 体积电阻率 电池模型 电子性能
分 类 号:TM914.4[电气工程—电力电子与电力传动]
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