Ce掺杂的WO_3薄膜的电学性质  

Electrical Properties of Ce-Doped WO_3 Thin Film

作　　者：董亮[1] 王豫[1] 李德柱[1] 李统业[1] 严仲明[1] 

机构地区：[1]西南交通大学超导研究开发中心,四川成都610031

出　　处：《西南交通大学学报》2009年第6期963-967,共5页Journal of Southwest Jiaotong University

基　　金：国家自然科学基金资助项目(50772092);西南交通大学青年教师科学研究起步基金资助项目(2008Q006)

摘　　要：在磁控溅射仪上用直流Ce和W共同磁控溅射方法,在载玻片上沉积Ce掺杂的WO3薄膜,以研究溅射功率对该薄膜电学性质的影响.薄膜在550℃的空气中退火1 h,用X射线衍射和扫描电子显微镜分析薄膜的显微结构.结果表明:Ce掺杂后薄膜呈岛状结构生长,有利于薄膜沿b轴方向生长;当Ce和W的溅射功率分别为40 W和160 W时,薄膜的非线性系数最大,达到7.92.Ce-doped WO3 thin films were fabricated by DC reactive magnetron sputtering on glass substrates and annealed in dry air at 550℃ for 1 h. The effects of sputtering power on electrical properties of the film were investigated. X-ray diffraction （XRD） and scanning electron microscopy （SEM） analyses were performed to characterize the film. The experimental results show that Ce-doping caused WO3 crystals to grow along the preferred orientation （b-axis） with island structures, and the film displayed the highest nonlinear coefficient of 7.92 when the sputtering powers for Ce and W were 40 W and 160 W, respectively.

关 键 词：CE掺杂 WO3薄膜 磁控溅射 显微结构 电学性质 

分 类 号：TN304[电子电信—物理电子学] TN305.92