ZnO纳米线阵列的生长机制  

The Growth Mechanism of ZnO Nanowire Arrays

作　　者：安春霞[1] 姜威[1] 魏平[1] 

机构地区：[1]哈尔滨师范大学

出　　处：《哈尔滨师范大学自然科学学报》2009年第5期64-67,共4页Natural Science Journal of Harbin Normal University

摘　　要：通过化学气相沉积方法在Si衬底上制备了规则排列的ZnO纳米线阵列.利用扫描电子显微镜观察了合成的氧化锌纳米结构的形貌,表明当In在前驱物中引入超过0.3 g时,在Si衬底上合成的纳米结构都是纳米线阵列;高分辨透射电子显微镜图像、X射线图谱和X射线能谱均表明合成的ZnO纳米线阵列具有纤锌矿结构,择优沿(001)方向生长.提出了在Si衬底上生长ZnO纳米线阵列的机制.Well- aligned ZnO nanowire arrays have been successfully synthesaze（1 on ~1 ~, luv） suostrate mruuB. ehemieal vapor deposition method. The morphologies were observed by scanning electron microscopy, indica- ting that when the content of In is more than or equals 0.3 g, ZnO nanowire arrays on a Si substrate were observed. High - resolution transmission electron microscopy image, X - ray diffraction pattern and X - ray ener dispersive spectrum indicate that the as -synthesized ZnO nanowire arrays have a wurtzite structure, grow preferentially along （001） direction. The growth mechanism of ZnO nanowire arrays on Si （100） substrate was proposed in this paper.

关 键 词：ZNO纳米线阵列 化学气相沉积 生长机制 

分 类 号：TB383[一般工业技术—材料科学与工程] TN304.21[电子电信—物理电子学]