300mm Si片加工及最新发展  

300 mm Si Wafer Manufacture and New Development

作　　者：库黎明[1] 闫志瑞[1] 索思卓[1] 周旗钢[1] 

机构地区：[1]北京有色金属研究总院有研半导体材料股份有限公司,北京100088

出　　处：《半导体技术》2009年第12期1153-1156,共4页Semiconductor Technology

基　　金：国家"863"十一五02重大专项支持(2008ZX02401)

摘　　要：65 nm及以下线宽对Si片表面的各方面性能要求越来越高,主要体现在两个方面,一个是加工工艺,另一个是加工设备。在加工方法上,65 nm线宽用300 mmSi片不同于90 nm,如运用多步单片精密磨削,不仅可以提高表面几何参数,还可以减小表面特别是亚表面的损伤层。而对于加工设备,要求更加精密,特别是单面精抛光,在保证去除量的同时还要使Si片表面各点的去除量保持均匀。对目前300 mmSi片的磨削、抛光及清洗的每一道工艺流程,特别是相对于65 nm技术的一些加工流程及方法的最新发展进行了详细的论述,指出了300 mmSi片加工工艺的发展趋势。65 nm and below node technology requires all the parameters of wafers more critically, mainly reflected in two aspects, one is processing method, the other is the equipment. In the processing, 65 nm width is different from 90 nm, such as the use of multi-step single-side grinding, which can improve the surface geometry and reduce the surface, especially the sub-surface damage layer. As for the equipment, it requires more critically, especially in single-side polishing, which guarantees all the points on the surface removed uniformly. The new development of every process of 300 mm wafer manufacture, grinding, polishing and cleaning, especially about 65 nm node technology are introduced. At the same time, it points out the developing tendency of the 300 mm wafers manufacturing process.

关 键 词：300mm Si片 磨削 抛光 清洗 

分 类 号：TN305.1[电子电信—物理电子学]