氧化锌薄膜的p型掺杂及光学和电学性质研究  

Synthesis of p-type ZnO thin films and their optical and electric properties

作　　者：李韫慧[1,2,3] 张琦锋[1] 孙晖[1] 薛增泉[1] 吴锦雷[1] 

机构地区：[1]北京大学信息科学技术学院纳米器件物理与化学教育部重点实验室,北京100871 [2]中国科学院半导体研究所半导体超晶格国家重点实验室,北京100083 [3]中国科学院研究生院,北京100049

出　　处：《材料科学与工艺》2009年第5期686-690,695,共6页Materials Science and Technology

基　　金：国家重点基础研究发展规划项目(2001CB610503);国家自然科学基金资助项目(60471007;60471008;90406024;50672002);北京市自然科学基金资助项目(4042017)

摘　　要：为了实现氧化锌薄膜的p型掺杂,从而制备氧化锌同质p-n结,采用化学气相沉积法,以二水合醋酸锌为前驱,醋酸铵为氮源,在氧气氛下制备了氮掺杂的p型氧化锌薄膜.利用X射线光电子能谱和X射线衍射分析,表征了氧化锌薄膜的化学成分.通过霍尔效应测量证实了薄膜的p型导电特性.探讨了制备过程中温度、压强、源物质等条件对反应产物的影响,研究了薄膜的光学和电学特性,得到了p型氧化锌薄膜的吸收光谱和光致发光光谱,以及氧化锌p-n结的伏安特性曲线.P-type ZnO films were synthesized via chemical vapor deposition method by using zinc acetate dihydrate and ammonium acetate as solid-state sources. X-ray photoelectron spectroscopy and X-ray diffraction spectroscopy were employed to analyze the composition of p-type ZnO films, and their conductive type was characterized by the measurement of Hall effect. Influences of the growth temperature, the vapor pressure and the source material on electric properties of the films were investigated. The spectra of optical absorption and photolumineseence of ZnO films were obtained, and the I - V behavior of ZnO p - n homojunctions was discussed.

关 键 词：ZNO薄膜 掺杂 p—n结 光致发光 

分 类 号：TN304[电子电信—物理电子学] TB383[一般工业技术—材料科学与工程]