单个浮置场限环终端结构击穿电压模型  

Breakdown Voltage Model of Single Floating Field Ring Termination

作　　者：孙伟锋[1] 王佳宁[1] 易扬波[1] 

机构地区：[1]东南大学国家ASIC系统工程技术研究中心,南京210096

出　　处：《微电子学》2009年第6期848-851,856,共5页Microelectronics

基　　金：江苏省自然科学基金资助项目(BK2008287);东南大学国家自然科学基金预研支持项目(XJ2008312)

摘　　要：基于B.J.Baliga的击穿电压理论,通过求解双边突变圆柱结的泊松方程,提出了单个浮置场限环终端结构的击穿电压解析模型。该模型计算结果与模拟结果的误差在±7%之内,具有精度高、应用范围广等特点,可以帮助设计者初步确定浮置场限环注入窗口大小及与主结的间距等关键参数。An analytical breakdown voltage model of single floating field ring termination was proposed base on Bo J. Baliga＇s theory of breakdown voltage and Possion＇s Equatioru The error between calculation and simulation results are within ±7%. The model can help designer define key parameters, such as diffusion area of the floating field ring and pitch-width between the main junctions and the floating field ring. The model features high precision and wide application.

关 键 词：浮置场限环 击穿电压模型 终端结构 

分 类 号：TN710[电子电信—电路与系统] TN432