低压低功耗无源UHF RFID标签芯片模拟前端电路的设计  

Design of Low-Voltage and Low-Power Analog Front for UHF Passive RFID Tag

作　　者：章少杰[1] 孙玲玲[1] 洪慧[1] 罗世钦[1] 吕彬义[1] 

机构地区：[1]杭州电子科技大学射频电路与系统教育部重点实验室,杭州310018

出　　处：《电子器件》2009年第6期1035-1039,共5页Chinese Journal of Electron Devices

基　　金：浙江省重大科技项目资助(2006C11106)

摘　　要：本文从设计符合EPCTMC1G2协议的超高频无源射频识别标签芯片的角度出发,对RFID标签芯片模拟前端电路进行设计。通过对各个关键电路的功耗与电源进行优化,实现了一个符合协议要求的低电压、低功耗的超高频无源RFID标签芯片的模拟前端。该UHF RFID标签模拟前端设计采用SMIC 0.18μm EEPROM CMOS工艺库。仿真结果表明,标签芯片模拟前端的整体功耗控制在2.5μW以下,工作电源可低至1 V,更好地满足了超高频无源射频识别标签芯片应用需求。This paper focuses mainly on designing analog front of a low-voltage and tow-power RFID tag according to demand of EPCTM CIG2. Several key circuits of analog front of RFID tag, low-voltage and lowpower analog front of passive uhf RFID tag are designed and optimized. All circuits are designed with Cadence software using SMIC 0. 18 μm EEPROM CMOS technology kit. The power consumption of the analog front of RFID tag is smaller than 2.5 μW and work voltage is 1 V. These parameters satisfy with the application of passive UHF RFID tag well.

关 键 词：超高频(UHF) 射频识别(RFID) 低电压 低功耗 

分 类 号：TN4[电子电信—微电子学与固体电子学]