锰及其硅化物在Si(100)表面的反应外延生长  

Reactive Epitaxial Growth of Manganese and Manganese Silicide on Si(100)

作　　者：孙静静[1] 邹志强[2] 王丹 赵明海[3] 陈礼[4] 

机构地区：[1]上海交通大学微纳科学技术研究院,上海200240 [2]上海交通大学分析测试中心,上海200240 [3]上海交通大学物理系,上海200240 [4]上海交通大学材料科学与工程学院,上海200240

出　　处：《功能材料与器件学报》2009年第6期564-568,共5页Journal of Functional Materials and Devices

基　　金：上海市科委基础研究重点项目(No.07JC14026)

摘　　要：采用超高真空分子束外延-扫描隧道显微镜(UHVMBE-STM)系统研究了不同温度下锰及其硅化物在Si(100)-2×1重构表面上的外延生长情况。实验结果表明当生长过程中衬底温度控制在室温到135℃时,生成大小基本一致的锰纳米团簇;当衬底温度达到210℃时锰与硅开始发生反应,形成硅化物,并有纳米线结构出现;当衬底温度达到330℃时,纳米线完全被棒状物或不规则的三维岛状硅化物取代。随着沉积时衬底温度升高,生成物的成核密度与生长温度的关系与经典的二维岛成核理论相符合。Epitaxial growth of manganese and manganese silicide on Si （ 100 ） -2 ~ 1 reconstructed surface at different temperatures was studied using ultra high vacuum molecular beam epitaxial - scanning tunucling microscopy system（UHVMBE- STM）. The results showed that when the temperature of substrate was controlled from room temperature（RT） to 135℃ in the growing progress, the products were manga- nese nanoclusters which were ahnost in the same size ; when the substrate temperature was elevated to 210℃, manganese began to react with Si, and there were manganese silicide nanowires on the substrate; when it was up to 330℃, the nanowires on the substrate were totally replaced by stick -like manganese silicide and three - dimensional（3 D） irregularly - shaped silicide islands. Along with the deposited tem- perature increasing, the relationship between the nucleation density of the products and the deposition temperature was well in accorded with that the classical nucleation theory of the two- dimensional （2D） island growth.

关 键 词：扫描隧道显微镜(STM) Si(100)-2×1重构表面 纳米线 棒状物 三维岛状硅化物 

分 类 号：TN305.3[电子电信—物理电子学] O613.72[理学—无机化学]